3.8 Article

Fabrication of Cd-free ZnCuInS/ZnS based inverted quantum dot light-emitting diode: Considering substrate temperature effect on sputtered ZnO layer

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Article Physics, Applied

Fabrication of inverted ZnCuInS/ZnS based quantum-dot light-emitting diodes with the non-stoichiometric ZnO layers

Mohammad Mostafizur Rahman Biswas et al.

Summary: The performance of Cd-free quantum-dot light-emitting diode using undoped and non-stoichiometric sputtered ZnO was studied. By varying the thickness of highly conductive metallic ZnO sputtered with pure argon gas, the structural, morphological, and electrical properties were enhanced. The device performance was validated by measuring the mobility and carrier concentration of the sputtered ZnO film, achieving an external quantum efficiency of 1.02% and current efficiency of 1.86 cd A(-1) with specific mobility and carrier concentration values.

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