Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD

In this work, based on physical vapor deposition and high-temperature annealing (HTA), the 4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal recrystallization during the HTA process, the FWHMs of X-ray rocking curves for (002) and (102) planes are encouragingly decreased to 62 and 282 arcsec, respectively. On such an AlN template, an ultra-thin AlN with a thickness of similar to 700 nm grown by MOCVD shows good quality, thus avoiding the epitaxial lateral overgrowth (FLOG) process in which 3-4 mu m AlN is essential to obtain the flat surface and high crystalline quality. The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED, therefore significantly improving yields and decreasing cost.

Automated summary

This study successfully initialized a 4-inch crack-free high-quality AlN template using physical vapor deposition and high-temperature annealing, leading to the growth of a high-quality 700 nm thick AlN film. By avoiding the epitaxial lateral overgrowth process, this technology improves the manufacturing efficiency of UVC-LED and reduces costs.