期刊
NANOSCALE ADVANCES
卷 4, 期 3, 页码 904-910出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1na00716e
关键词
-
资金
- Technology Innovation Program [20010737]
- Ministry of Trade, Industry and Energy (MOTIE, Korea)
Adding BPPB small molecule ETL blended ZnO to QLED can slow down the ZnO ETL mobility, improve efficiency and device lifetime, reduce electron injection to match charge balance in the QD layer.
The efficiency and device lifetime of quantum dot light-emitting diode (QLED) devices suffer from the charge imbalance issue resulting from excess electron injection from the ZnO electron transport layer (ETL) to the quantum dot (QD) emissive layer (EML). Herein we report 1,3-bis(9-phenyl-1,10-phenanthrolin-2-yl)benzene (BPPB) small molecule ETL blended ZnO as an interlayer in inverted red indium phosphide (InP) based QLEDs to slow down the ZnO ETL mobility. The device with ZnO : BPPB (15 wt%) shows 16.7% external quantum efficiency and 595 h lifetime (T-50) at 1000 cd m(-2). Insertion of a thin hybrid interlayer reduces the electron injection to match the charge balance in the QD layer and also suppresses the interfacial exciton quenching between the ZnO ETL and QD EML.
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