Visible to Near-Infrared Photodiodes with Advanced Radiation Resistance

A new type of sub-micron metal-intrinsic semiconductor-metal visible to near-infrared (400-1600 nm) photodiodes based on a unique combination of radiation-resistant functional materials: sapphire, TiN, MoOx, CdTe, Hg3In2Te6, and graphite is proposed. The promising optoelectronic characteristics are calculated in the scope of a comprehensive semi-analytical model, based on the complementary fusion of numerical Transfer Matrix optical simulation with analytical Hecht and dark generation current equations. The findings demonstrate proof-of-concept next-generation high-performance optoelectronic devices with advanced radiation resistance. Moreover, a simple device engineering modification has revealed a significant optimization potential for considered photodiodes.

Automated summary

A new type of sub-micron metal-intrinsic semiconductor-metal photodiodes based on radiation-resistant functional materials is proposed. The optoelectronic characteristics were calculated using a comprehensive semi-analytical model, demonstrating advanced radiation resistance and optimization potential through device engineering modification.