期刊
MEMBRANES
卷 12, 期 1, 页码 -出版社
MDPI
DOI: 10.3390/membranes12010029
关键词
thin film transistors; flexible; fully transparent; oxide
类别
资金
- National Key R&D Program of China [2021YFB3600604]
- Science Foundation of Yulin Normal University [G2020ZK01]
- Guangdong Basic and Applied Basic Research Foundation [2020B1515020032]
- National Natural Science Foundation of China [62074059, 22090024]
- Guangdong Major Project of Basic and Applied Basic Research [2019B030302007]
- Ji Hua Laboratory scientific research project [X190221TF191]
- Fundamental Research Funds for the Central Universities [2020ZYGXZR060]
- 2021 Guangdong University Student Science and Technology Innovation Special Fund (Climbing Plan Special Fund) [pdjh2021b0036]
- College Students Innovation and Entrepreneurship Training Program [S202110561184]
Flexible and fully transparent thin film transistors (TFT) were successfully fabricated using room temperature processes, showing excellent performance, transparency, and stability. These TFTs have great potential in smart, portable flexible display, and wearable device applications.
Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (mu(sat)) of 7.9 cm(2)/V center dot s, an I-on/I-off ratio of 4.58 x 10(6), a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.
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