期刊
SURFACES AND INTERFACES
卷 27, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.surfin.2021.101562
关键词
Photoluminescence; Anisotropic; Defect engineering; Electric control
类别
资金
- Natural Science Foundation of Jiangsu Province [BK20190948]
- National Natural Science Foundation of China [61904119, 21872071]
Introducing sulfur vacancy defects to influence the photoluminescence properties of ReS2 enhances the electrical control of anisotropic excitons, paving the way for innovative exciton engineering in new 2D electronic and optoelectronic devices.
Engineering the photoluminescence (PL) properties, such as emission peaks, intensity, and lifetime, is highly desirable for widespread applications. Electric control is a facile and feasible method, and electrical manipulation of the PL properties with a high efficiency becomes increasingly important. ReS2 has excellent environmental stability, distinctive interlayer decoupling, and strong anisotropic properties. Herein, taking ReS2 as a prototype material, we propose a novel strategy to enhance electrical control of anisotropic excitons in ReS2 by defect engineering. Sulfur vacancies have been introduced controllably by mild argon plasma treatment, and contribute to the anisotropic defect-related exciton emission whose polarization direction is almost the same as those of the excitons along the Re-S atomic chains. However, the conversion from the neutral excitons to the defect-related excitons significantly modulate the radiation recombination behavior under a lateral electric field. The defect-engineering-enhanced electrical manipulation of anisotropic excitons paves the way towards an exciton engi-neering in new 2D electronic and optoelectronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据