Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2

Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory. Besides, most of the inverters were made of mechanically exfoliated materials, which hinders their reproducible production and large-scale integration in practical application. In this study, we demonstrate a practical approach to fabricate CMOS inverter arrays using large-area p-MoTe2 and n-MoS2, which are grown via chemical vapor deposition method. The current characteristics of the channel materials are balanced by atomic layer depositing Al2O3. Complete logic swing and clear dynamic switching behavior are observed in the inverters. Especially, ultra-low power consumption of similar to 0.37 nW is achieved. Our work paves the way for the application of 2D TMDCs materials in large-scale low-power-consumption logic circuits.

Automated summary

This study demonstrates a practical approach to fabricate CMOS inverter arrays using large-area p-MoTe2 and n-MoS2 grown via chemical vapor deposition method. By balancing the current characteristics of channel materials, complete logic swing and clear dynamic switching behavior are achieved in the inverters. The research results show that the goal of achieving ultra-low power consumption has been realized.