期刊
ACS APPLIED ENERGY MATERIALS
卷 4, 期 11, 页码 12900-12908出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaem.1c02577
关键词
hole-transport layer; polyamorphism; organic photovoltaics; copper oxides; photodeposition; low-cost processing; low-cost roll-to-roll processing; Unfortunately; solution pro-
资金
- Alberta Innovates (Strategic Research Project grant)
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- University of Calgary
- Canadian Foundation for Innovation (John R. Evans Leaders Fund)
- Research Tool and Instruments Grant Program of the NSERC
- NSERC
- Canada Foundation for Innovation (CFI)
- Natural Sciences and Engineering Research Council (NSERC)
- National Research Council (NRC)
- Canadian Institutes of Health Research (CIHR)
- Government of Saskatchewan
- University of Saskatchewan
The study reports the fabrication of amorphous aCuOx thin films using a UV-based thin-film deposition method from commercially available starting materials, which exhibit p-type semiconductor behavior after thermal annealing and can be used as HTLs in organic photovoltaic devices.
Hole-selective charge-transport layers are an important part of modern thin-film electronics, serving to direct electron flow and prevent leakage current. Crystalline metal-oxide hole-transport layers (HTLs) such as NiO and CuOx exhibit high performance and stability. However, they are traditionally not amenable to scalable and sustainable solution-processing techniques. Conversely, amorphous metal oxides are much more readily prepared by low-temperature solution processing methods but often lack the charge-transport properties of crystalline semiconductors. Herein, we report the fabrication of amorphous aCuOx thin films from commercially available starting materials using a simple UV-based thin-film deposition method. Subsequent thermal annealing of the a-CuOx induces an amorphous-to-amorphous phase transition, resulting in p-type semiconducting behavior. The resulting thin films were used as HTLs in organic photovoltaic devices with power conversion efficiencies comparable to those low-temperature thin-film deposition
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