4.7 Article

MAAc Ionic Liquid-Assisted Defect Passivation for Efficient and Stable CsPbIBr2 Perovskite Solar Cells

期刊

ACS APPLIED ENERGY MATERIALS
卷 4, 期 10, 页码 10584-10592

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsaem.1c01537

关键词

carbon electrodes; all-inorganic perovskite solar cells; MAAc ionic liquid; pre-spin-coating; defect passivation

资金

  1. Lianyungang Haiyan Plan [2018-QD-019]
  2. Postgraduate Research and Practice Innovation Program in Jiangsu Province [SY202040X]
  3. National Natural Science Foundation of China [61774069, 21805106]
  4. Science Foundation of Jiangsu Ocean University [KQ17015, Z2017011]
  5. Natural Science Fund for Colleges and Universities in Jiangsu Province, China [19KJB150023]
  6. Jiangsu Planned Projects for Postdoctoral Research Funds [2019K207]
  7. Six Talent Peaks Project in Jiangsu Province [JNHB 114]
  8. Open-end Funds of the Jiangsu Key Laboratory of Function Control Technology for Advanced Materials, Jiangsu Ocean University

向作者/读者索取更多资源

Precoating a methylammonium acetate (MAAc) ionic liquid onto a TiO2 layer before depositing CsPbIBr2 film improves the crystal quality and interface contact, reduces defects, suppresses nonradiative recombination, and enhances the photovoltaic conversion efficiency.
Cesium-based all-inorganic perovskite solar cells (PSCs), such as CsPbIBr2 PSCs, have attracted wide attention for good thermal and wet stability, but the low open-circuit voltage (V-oc) mainly caused by the inadequate coverage of CsPbIBr2 films is the main reason for limiting their development. The CsPbIBr2 films grown on TiO2 substrate directly have a large number of pinholes, which bring a lot of defects and lead to an increase of nonradiative recombination. In this work, a strategy extended for CsPbIBr2 films by precoating methylammonium acetate (MAAc) ionic liquid onto a TiO2 layer before depositing the CsPbIBr2 film is demonstrated. The uniformly distributed MA(+) will be the nucleation center at the bottom of the CsPbIBr2 film, which exhibited a notable impact on the crystallization kinetics of CsPbIBr2 films. This effect simultaneously enhanced the crystal quality of the CsPbIBr2 film and interfacial contact between the electron transporting layer (ETL) and CsPbIBr2 layer. It is instrumental in decreasing the trap state density, suppressing nonradiative recombination, and extracting the charge carriers. Therefore, the stability of the optimized device has been improved considerably, and the champion power conversion efficiency (PCE) is up to 8.85% with a high V-oc of 1.26 V. Benefiting from passivation, the PSC with 2 M MAAc IL interfacial modification remains 82% of its initial PCE after 30 days of exposing the device to ambient air at room temperature.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据