4.7 Review

Perovskite Nanowires for Next-Generation Optoelectronic Devices: Lab to Fab

期刊

ACS APPLIED ENERGY MATERIALS
卷 5, 期 2, 页码 1342-1377

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsaem.1c03284

关键词

perovskites; nanowires; optoelectronic devices; photodetectors; lasers; light-emitting diodes; solar cells; field-effect transistors

资金

  1. Council of Scientific and Industrial Research (CSIR)
  2. Department of Science and Technology (DST), Indo-Korea [INT/Korea/P-40, EEQ/2017/000304]
  3. School of Chemistry, University of Hyderabad, IoE [97020058]

向作者/读者索取更多资源

This article provides a detailed introduction to the crystal growth mechanism and the underlying physics of light-matter interaction in perovskite nanowires, and discusses various possibilities and challenges in optoelectronic applications.
The minuscule sizes of one-dimensional (1D) nanostructures have revolutionized photonic circuitry and led to efficient optoelectronic devices with unprecedented speed. With the impressive progress accomplished in consideration of pressing challenges, perovskite materials have been in the spotlight in research. The low-dimensional perovskites (especially nanowires) supersede their bulk counterparts with remarkable optoelectronic properties that make them suitable to be used in a broad range of applications. Nevertheless, for realizing any potential application, mechanistic insights on the crystal growth, especially the ordering/orientation and hence the underlying physics of light-matter interactions in the perovskite nanowires, are needed, and research is yet to plateau. Herein, we emphasize the fundamental understanding of formation mechanisms and anticipated challenges along with the progressive evolutions of several blossoming candidates in exciting optoelectronic applications such as photodetectors, lasers, light-emitting diodes, photovoltaic cells, and field-effect transistors. Importantly, the perspectives offered in this Review can stimulate future research directions and opportunities that could pave the way for ambient-stable next-generation optoelectronic devices.

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