期刊
NPJ QUANTUM MATERIALS
卷 7, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41535-021-00415-5
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资金
- National Key Research and Development Program [2019YFA0308602, 2016YFA0300404]
- Key Research and Development Program of Zhejiang Province, China [2021C01002]
- Vacuum Interconnected Nanotech Workstation (Nano-X) [B2004]
- Fundamental Research Funds for the Central Universities in China
- National Nature Science Foundation of China [NSFC-11774196, NSFC-11674326, NSFC-11874357]
- Tsinghua University Initiative Scientific Research Program
- National Natural Science Foundation of China
- Chinese Academy of Sciences [U1832141, U1932217, U2032215]
The electronic evolution of Ti-doped 1T-TaS2 is studied using scanning tunneling microscopy (STM), revealing the emergence of a clover-shaped orbital texture and a transition from insulator to metal. Trapped electrons are directly visualized in dI/dV conductance maps, providing insights into the electronic state evolution in doped strong-correlated systems.
The electronic evolution of doped Mott insulators has been extensively studied for decades in search of exotic physical phases. The proposed Mott insulator 1T-TaS2 provides an intriguing platform to study the electronic evolution via doping. Here we apply scanning tunneling microscopy (STM) to study the evolution in Ti-doped 1T-TaS2 at different doping levels. The doping Ti atom locally perturbs the electronic and spin state inside the doped star of David and induces a clover-shaped orbital texture at low-doping levels (x < 0.01). The insulator to metal transition occurs around a critical point x = 0.01, in which small metallic and large insulating domains coexist. The clover-shaped orbital texture emerges at a broader energy range, revealing a competition with the electron correlation. It transforms to a disorder-induced Anderson insulating behavior as doping increases. We directly visualize the trapped electrons in dI/dV conductance maps. The comprehensive study of the series of Ti-doped 1T-TaS2 deepens our understanding of the electronic state evolution in a doped strong-correlated system.
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