4.7 Article

High Efficiency Quasi-2D/3D Pb-Ba Perovskite Solar Cells via Phenethylammonium Chloride Addition

期刊

SOLAR RRL
卷 6, 期 6, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202101098

关键词

Pb-Ba perovskite absorbers; perovskite solar cells; quasi-2D; stability

资金

  1. Ministry of Science and Technology, Taiwan [110-2221-E-182-044, 110-2628-E-182-001]
  2. Chang Gung University [QZRPD181]
  3. Chang Gung Memorial Hospital at Linkou [CMRPD2L0081, BMRPC74]

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The presence of toxic lead in perovskite solar cells hinders their commercialization. This study investigates the effects of adding phenethylammonium chloride as an additive to improve film formation and enhance the efficiency and stability of perovskite solar cells.
The existence of toxic Pb in perovskite solar cells may hinder the pace of commercialization. Based on the previous work, Ba2+ is most suitable for partially replacing Pb2+ among alkaline-earth metal cations. However, a high substitution ratio may lead to poor film coverage. A detailed study of the effects on film formation with phenethylammonium chloride (PEACI) additive for large n (n > 40) quasi-2D/3D mixed-cation Pb-Ba perovskite (i.e. PEA(x)MA(0.4)(-x)FA(0.6)Pb(0.9)Ba(0.1)I(y)Cl(3-y)) is presented. The perovskite layer with defects passivation exhibits efficient charge-carrier transport, suppression of trap-assisted recombination, and improved electron extraction capability. The mapping distribution of surface potentials is quantified by photo-assisted Kelvin probe force microscopy to verify the carrier generation. Consequently, the power conversion efficiency (PCE) of the PEA(x)MA(0.4)(-x)FA(0.6)Pb(0.9)Ba(0.1)I(y)Cl(3-y) perovskite solar cell is enhanced significantly from an averaged PCE of 15.0% of the pristine active layer to 18.1% and the champion PCE can achieve 19.1%. The corresponding device shows outstanding long-term stability in air, retaining 90% of its initial PCE for more than 700 h. Herein, a promising strategy to passivate defects and improve the perovskite film quality for superior optoelectronic properties is provided.

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