4.8 Article

Mobility-stability trade-off in oxide thin-film transistors

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Materials Science, Multidisciplinary

Passivation layer effect on the positive bias temperature instability of molybdenum disulfide thin film transistors

Woonggi Hong et al.

Summary: The study reveals that depositing a passivation layer of aluminum oxide on molybdenum disulfide thin film transistors can effectively reduce the threshold voltage shift in positive bias temperature stability testing, leading to improved device stability.

JOURNAL OF INFORMATION DISPLAY (2021)

Article Materials Science, Coatings & Films

Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition

Ali Mahmoodinezhad et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2020)

Article Nanoscience & Nanotechnology

Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors

Junghwan Kim et al.

APL MATERIALS (2019)

Review Physics, Applied

Device modeling of amorphous oxide semiconductor TFTs

Katsumi Abe et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2019)

Article Engineering, Electrical & Electronic

Hybrid organic-metal oxide multilayer channel transistors with high operational stability

Yen-Hung Lin et al.

NATURE ELECTRONICS (2019)

Article Chemistry, Multidisciplinary

Material Design of p-Type Transparent Amorphous Semiconductor, Cu-Sn-I

Taehwan Jun et al.

ADVANCED MATERIALS (2018)

Article Chemistry, Physical

Sub-5 nm SnO2 chemically coupled hollow carbon spheres for efficient electrocatalytic CO2 reduction

Yiliguma et al.

JOURNAL OF MATERIALS CHEMISTRY A (2018)

Article Instruments & Instrumentation

Formation of tin-tin oxide core-shell nanoparticles in the composite SnO2-x/nitrogen-doped carbon nanotubes by pulsed ion beam irradiation

P. M. Korusenko et al.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2017)

Article Materials Science, Multidisciplinary

Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor

Junghwan Kim et al.

NPG ASIA MATERIALS (2017)

Article Physics, Applied

Hydrogen anion and subgap states in amorphous In-Ga-Zn-O thin films for TFT applications

Joonho Bang et al.

APPLIED PHYSICS LETTERS (2017)

Article Engineering, Electrical & Electronic

High-Voltage Amorphous InGaZnO TFT With Al2O3 High-k Dielectric for Low-Temperature Monolithic 3-D Integration

Ming-Jiue Yu et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)

Article Materials Science, Multidisciplinary

Ultrawide band gap amorphous oxide semiconductor, Ga-Zn-O

Junghwan Kim et al.

THIN SOLID FILMS (2016)

Article Multidisciplinary Sciences

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100°C

Won-Gi Kim et al.

SCIENTIFIC REPORTS (2016)

Article Nanoscience & Nanotechnology

Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors

Youngho Kang et al.

ADVANCED ELECTRONIC MATERIALS (2015)

Article Engineering, Electrical & Electronic

Achieving High Field-Effect Mobility Exceeding 50 cm2/Vs in In-Zn-Sn-O Thin-Film Transistors

Ji Hun Song et al.

IEEE ELECTRON DEVICE LETTERS (2014)

Article Electrochemistry

Surface chemistry of electrodeposited Cu2O films studied by XPS

Changqiong Zhu et al.

ELECTROCHIMICA ACTA (2013)

Review Materials Science, Multidisciplinary

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

Jae Kyeong Jeong

JOURNAL OF MATERIALS RESEARCH (2013)

Article Engineering, Electrical & Electronic

Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors

Suehye Park et al.

MICROELECTRONICS RELIABILITY (2012)

Article Nanoscience & Nanotechnology

Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

Sanghun Jeon et al.

ACS APPLIED MATERIALS & INTERFACES (2011)

Review Chemistry, Analytical

Metal Oxide Gas Sensors: Sensitivity and Influencing Factors

Chengxiang Wang et al.

SENSORS (2010)

Article Chemistry, Analytical

Room temperature CO gas sensing using Zn-doped In2O3 single nanowire field effect transistors

Nandan Singh et al.

SENSORS AND ACTUATORS B-CHEMICAL (2010)

Article Materials Science, Multidisciplinary

Bias stress effect in low-voltage organic thin-film transistors

Ute Zschieschang et al.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2009)

Article Engineering, Electrical & Electronic

Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

Jae-Heon Shin et al.

ETRI JOURNAL (2009)

Article Materials Science, Multidisciplinary

CMOS-compatible nanoscale gas-sensor based on field effect

J. J. Velasco-Velez et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)