Fabrication of a Mesoporous Multimetallic Oxide-based Ion-Sensitive Field Effect Transistor for pH Sensing

Sensitive and reliable noninvasive sensors are in demand to cope with an increasing need for robust working conditions and fast results. One of the leading potential technologies is field-effect transistor (FET)-based sensors to improve response time, sensitivity, and stability. Here, a sol-gel method fabricates an ion-sensitive field-effect transistor with a high current and output sensitivity for electrochemical sensing, solving binary device design, component regulating, and long-term stability, while maintaining the promoted sensitivity. Metal oxide-based devices with single and binary contents are fabricated and characterized for monitoring pH changes, with performance fitted to a Nernst-Poisson model. After detecting the performance, the result was compared with devices in different components and ratios to obtain excellent performance and high stability. In addition, these extended gate FETs with multimetallic oxide promise efficiency and stability optimization in terms of a flexible component design, demonstrating the feasibility of the novel sol-gel fabrication method to achieve efficient and reliable FET sensors.

Automated summary

The use of sol-gel method to fabricate ion-sensitive field-effect transistors with high sensitivity and metal oxide-based devices with single and binary contents shows promising results in detecting pH changes. These devices demonstrate efficiency and stability optimization, showcasing the feasibility of the novel sol-gel fabrication method in achieving efficient and reliable FET sensors.