4.5 Article

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

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Summary: In this study, efficient electrical spin injection and detection from NFO into p-Si via MgO tunnel barrier was achieved and proved to be promising. The use of oxide magnetic materials in spin injection and detection for room temperature spin-based electronic devices has been demonstrated.

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