期刊
ELECTRONICS
卷 10, 期 21, 页码 -出版社
MDPI
DOI: 10.3390/electronics10212642
关键词
AlGaN/GaN; HEMT; device parameters; breakdown voltage; high power; TCAD simulation
资金
- Korea Evaluation Institute of Industrial Technology (KEIT) [20004314]
- Ministry of Trade, Industry and Energy, Republic of Korea
- Korea Electric Power Corporation [R20XO01-10]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20004314] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
By varying the device design parameters, the study investigated the impact of device geometry on device performance, particularly focusing on the breakdown voltage (V-BR). The optimized AlGaN/GaN HEMT structure showed significantly improved V-BR performance compared to previous studies, providing valuable information for the selection of device geometry.
This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (V-BR) characteristics using a TCAD simulation. The effect of device geometry on the device performance was explored by varying the device design parameters, such as the field plate length (L-FP), gate-to-drain length (L-GD), gate-to-source length (L-GS), gate length (L-G), thickness of the Si3N4 passivation layer (T-ox), thickness of the GaN channel (T-ch), and AlGaN barrier (T-barrier). The V-BR was estimated from the off-state drain current versus the drain voltage (I-DS-V-DS) curve, and it exhibited a strong dependence on the length and thickness of the parameters. The optimum values of V-BR for all the device's geometrical parameters were evaluated, based on which, an optimized device geometry of the field-plated AlGaN/GaN HEMT structure was proposed. The optimized AlGaN/GaN HEMT structure exhibited V-BR = 970 V at I-GS = 0.14 A/mm, which was considerably higher than the results obtained in previous studies. The results obtained in this study could provide vital information for the selection of the device geometry for the implementation of HEMT structures.
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