Modeling Nanoscale III-V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach

We describe the multi-valley/multi-subband Monte Carlo (MV-MSMC) approach to model nanoscale MOSFETs featuring III-V semiconductors as channel material. This approach describes carrier quantization normal to the channel direction, solving the Schrodinger equation while off-equilibrium transport is captured by the multi-valley/multi-subband Boltzmann transport equation. In this paper, we outline a methodology to include quantum effects along the transport direction (namely, source-to-drain tunneling) and provide model verification by comparison with Non-Equilibrium Green's Function results for nanoscale MOSFETs with InAs and InGaAs channels. It is then shown how to use the MV-MSMC to calibrate a Technology Computer Aided Design (TCAD) simulation deck based on the drift-diffusion model that allows much faster simulations and opens the doors to variability studies in III-V channel MOSFETs.

Automated summary

The multi-valley/multi-subband Monte Carlo approach is used to model nanoscale MOSFETs with III-V semiconductors as channel materials. This approach considers carrier quantization and off-equilibrium transport, and can be applied for III-V channel MOSFET variability studies. Model verification is done through comparison with other methods, and calibration for TCAD simulation is also demonstrated.