Easy Fabrication of Performant SWCNT-Si Photodetector

We propose a simple method to fabricate a photodetector based on the carbon nanotube/silicon nitride/silicon (CNT/Si3N4/Si) heterojunction. The device is obtained by depositing a freestanding single-wall carbon nanotube (SWCNT) film on a silicon substrate using a dry transfer technique. The SWCNT/Si3N4/Si heterojunction is formed without the thermal stress of chemical vapor deposition used for the growth of CNTs in other approaches. The CNT film works as a transparent charge collecting electrode and guarantees a uniform photocurrent across the sensitive area of the device. The obtained photodetector shows a great photocurrent that increases linearly with the incident light intensity and grows with the increasing wavelength in the visible range. The external quantum efficiency is independent of the light intensity and increases with the wavelength, reaching 65% at 640 nm.

Automated summary

A simple method is proposed for fabricating a photodetector based on the carbon nanotube/silicon nitride/silicon (CNT/Si3N4/Si) heterojunction. The method avoids the thermal stress caused by chemical vapor deposition and uses a carbon nanotube film as the charge collecting electrode to ensure uniform photocurrent across the device's sensitive area.