期刊
ELECTRONICS
卷 11, 期 3, 页码 -出版社
MDPI
DOI: 10.3390/electronics11030479
关键词
resistive switching; thickness dependence; conductive filaments; RRAM; polarity change; hafnium oxide
资金
- Spanish Ministry of Science, Innovation and Universities
- European Regional Development Fund project Emerging orders in quantum and nanomaterials [TK134]
- Estonian Research Agency [PRG753]
- FEDER program [TEC2017-84321-C4-1-R, TEC2017-84321-C4-2-R]
This work observed the thickness-dependent resistive switching polarity in TiN/Ti/HfO2/Pt structures, and proposed a hypothesis on the change of polarity based on filament disruption at different interfaces.
In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO2/Pt structures as the sign of the voltages at which SET and RESET occur depended on the film thickness. A thorough revision of the previous literature on bipolar resistive switching polarity changes is made in order to condense previous knowledge of the subject in a brief and comprehensible way and explain the experimental measurements. The different resistive switching polarities occur in a similar voltage range, which is a new finding when compared to precedent research on the subject. A hypothesis is proposed to explain the change in resistive switching polarity, based on the assumption that polarity change is due to filament disruption occurring at different interfaces.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据