4.8 Article

Dipolar spin relaxation of divacancy qubits in silicon carbide

期刊

NPJ COMPUTATIONAL MATERIALS
卷 7, 期 1, 页码 -

出版社

NATURE PORTFOLIO
DOI: 10.1038/s41524-021-00673-8

关键词

-

资金

  1. Knut and Alice Wallenberg Foundation through the WBSQD2 project [2018.0071]
  2. Swedish Government Strategic Research Area SeRC
  3. Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]
  4. MTA Premium Postdoctoral Research Program
  5. Hungarian NKFIH grants of the National Excellence Program of Quantum-coherent materials project [KKP129866]
  6. NKFIH through the National Quantum Technology Program [2017-1.2.1-NKP-2017-00001]
  7. Quantum Information National Laboratory - Ministry of Innovation and Technology of Hungary
  8. Swedish Research Council [VR 2016-04068, 2018-05973]
  9. EU H2020 project QuanTELCO [862721]

向作者/读者索取更多资源

This study theoretically investigates the spin-induced spin relaxation processes of divacancy qubits in 4H-SiC, revealing the dependence of the longitudinal spin relaxation time T-1 on the concentration of point defect spins and the applied magnetic field. The results demonstrate that dipolar spin relaxation plays a significant role in limiting the coherence time of divacancy qubits in both as-grown and ion-implanted samples.
Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of these important defects, for instance, spin relaxation has not been thoroughly studied yet. Here, we carry out a theoretical study on environmental spin-induced spin relaxation processes of divacancy qubits in the 4H polytype of silicon carbide (4H-SiC). We reveal all the relevant magnetic field values where the longitudinal spin relaxation time T-1 drops resonantly due to the coupling to either nuclear spins or electron spins. We quantitatively analyze the dependence of the T-1 time on the concentration of point defect spins and the applied magnetic field and provide an analytical expression. We demonstrate that dipolar spin relaxation plays a significant role both in as-grown and ion-implanted samples and it often limits the coherence time of divacancy qubits in 4H-SiC.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据