Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. By confining thin layers of BiFeO3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

Automated summary

In this study, we propose a design strategy for antiferroelectric materials using interfacial electrostatic engineering. By confining BiFeO3 in a dielectric matrix, a metastable antiferroelectric structure can be induced. The reversible switching between this new phase and a ferroelectric state is achieved by applying an electric field. The use of electrostatic confinement provides a potential pathway for the design of engineered antiferroelectric materials with large and coupled responses.