期刊
SCIENCE ADVANCES
卷 8, 期 3, 页码 -出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.abl6406
关键词
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资金
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2020R1A4A1019518, 2019R1A2C1088324]
- Bio & Medical Technology Development Program of the NRF - Ministry of Science ICT [2017M3A9G8083382]
- Electronics and Telecommunications Research Institute (ETRI) - the Korean government [21ZB1100]
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [21ZB1100] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2020R1A4A1019518, 2019R1A2C1088324] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This study reports a technique that can precisely release epitaxial layers in commonly used III-V heterostructures without the need for a sacrificial buffer. The target interface for separation can be selectively determined by adjusting process conditions. This technique will provide higher fabrication flexibility in compound semiconductor technology.
Layer-release techniques for producing freestanding III-V epitaxial layers have been actively developed for heterointegration of single-crystalline compound semiconductors with Si platforms. However, for the release of target epitaxial layers from III-V heterostructures, it is required to embed a mechanically or chemically weak sacrificial buffer beneath the target layers. This requirement severely limits the scope of processable materials and their epi-structures and makes the growth and layer-release process complicated. Here, we report that epitaxial layers in commonly used III-V heterostructures can be precisely released with an atomic-scale surface flatness via a buffer-free separation technique. This result shows that heteroepitaxial interfaces of a normal lattice-matched III-V heterostructure can be mechanically separated without a sacrificial buffer and the target interface for separation can be selectively determined by adjusting process conditions. This technique of selective release of epitaxial layers in III-V heterostructures will provide high fabrication flexibility in compound semiconductor technology.
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