4.8 Review

Surface and interface control of black phosphorus

期刊

CHEM
卷 8, 期 3, 页码 632-662

出版社

CELL PRESS
DOI: 10.1016/j.chempr.2021.11.022

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资金

  1. National Natural Science Foundation of China, China [22036002, 92043302, 21577165, 21906176]
  2. China Postdoctoral Science Foundation, China [2018M641495]
  3. Youth Innovation Promotion Association, Chinese Academy of Sciences, China [2020354]
  4. Guangdong Provincial Natural Science Foundation, China [2020A1515010380, 2019A1515111062]
  5. Science and Technology Innovation Commission of Shenzhen [JCYJ20180507182047316]
  6. Strategic Priority Research Program of the Chinese Academy of Sciences, China [XDPB2002]
  7. City University of Hong Kong [7005505]

向作者/读者索取更多资源

This article reviews the recent progress in surface and interface control of black phosphorus (BP). The topics covered include the intrinsic characteristics of BP surface and interfaces, strategies to tailor and optimize BP surface and interface, as well as challenges and prospects.
Black phosphorus (BP), a burgeoning class of two-dimensional semiconductors, possesses favorable properties such as large specific surface area, high charge carrier mobility, and thickness-dependent bandgap. In particular, the lone pair electrons of phosphorus atoms are highly reactive, and the structural anisotropy leads to many unique anisotropic physicochemical properties. The electronic structure and properties of BP are sensitive to external fields. In this respect, the surface and interface of BP can be modulated to adjust the optical, mechanical, magnetic, and electrical properties, but the relationship between the surface/interface structure and properties must be well understood to optimize one or more of these properties. In this review, recent progress pertaining to surface and interface control of BP is described. The topics include: (1) intrinsic characteristics of the BP surface and interfaces, (2) strategies to tailor and optimize the BP surface and interface, and (3) challenge and prospective.

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