Annealing Studies of Copper Indium Oxide (Cu2In2O5) Thin Films Prepared by RF Magnetron Sputtering

Copper indium oxide (Cu2In2O5) thin films were deposited by the RF magnetron sputtering technique using a Cu2O:In2O3 target. The films were deposited on glass and quartz substrates at room temperature. The films were subsequently annealed at temperatures ranging from 100 to 900 & DEG;C in an O-2 atmosphere. The X-ray diffraction (XRD) analysis performed on the samples identified the presence of Cu2In2O5 phases along with CuInO2 or In2O3 for the films annealed above 500 & DEG;C. An increase in grain size was identified with the increase in annealing temperatures from the XRD analysis. The grain sizes were calculated to vary between 10 and 27 nm in films annealed between 500 and 900 & DEG;C. A morphological study performed using SEM further confirmed the crystallization and the grain growth with increasing annealing temperatures. All films displayed high optical transmission of more than 70% in the wavelength region of 500-800 nm. Optical studies carried out on the films indicated a small bandgap change in the range of 3.4-3.6 eV during annealing.

Automated summary

Copper indium oxide thin films were deposited using RF magnetron sputtering and annealed at various temperatures, leading to increased grain size and crystallinity. The films exhibited high optical transmission and a small bandgap change during annealing.