期刊
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
卷 15, 期 -, 页码 4161-4172出版社
ELSEVIER
DOI: 10.1016/j.jmrt.2021.10.002
关键词
Sintering; Synthesis; Microstructure; X-ray diffraction; Thermoelectric properties; Ceramics
资金
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2020R1F1A1075070]
- Korea Institute of Science and Technology, Seoul, Korea (KIST) [2V09070]
- National Research Foundation of Korea [2020R1F1A1075070] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The Ce4+ doping significantly enhances the electrical conductivity of Bi2-xCexO2Se and results in decreased Seebeck coefficient, increased thermal conductivity, and improved thermoelectric properties. Ce4+ doping is highly effective in enhancing the thermoelectric performance of Bi2O2Se.
We report on the effect of Ce4+ doping on the thermoelectric properties of Bi2-xCexO2Se (0 < x < 0.15). Bi(2-x)CexO(2)Se crystallizes in the tetragonal crystal structure (I4/mmm space group). The doping of Ce4+ for Bi3+ leads to a significant enhancement of electrical conductivity, which is mainly attributed to the increased electron concentration and the decreased band-gap energy. The Ce4+ doping decreases the absolute Seebeck coefficient and increases the thermal conductivity. The highest value of ZT (0.26) is obtained for Bi1.9Ce0.1O2Se at 773 K, which is 37% larger than that of pure Bi2O2Se (0.19) at 773 K. We believe that the Ce4+ doping is highly effective to enhance the thermoelectric properties of Bi2O2Se. (C) 2021 The Author(s). Published by Elsevier B.V.
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