期刊
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
卷 15, 期 -, 页码 1984-1995出版社
ELSEVIER
DOI: 10.1016/j.jmrt.2021.09.044
关键词
Amorphous Ag-GeTe; Multilevel resistive switching; Selector device; Neuromorphic computing; Convolutional neural network edge detection
资金
- National Research Founda-tion of Korea - Korean government [2016R1A3B1908249]
- Samsung Semiconductor Research Center in Korea University [IO201211-08116-01]
A functional switching layer is developed as three distinct devices, namely non-volatile memory, selector, and synaptic devices, using a GeTe-based single material system, offering multilevel characteristics and excellent selectivity. The Ag-GeTe materials showcase multi-functionality and may emerge as a prominent candidate for high-density cross-point architecture-based neuromorphic computing systems.
Functional neuronal computing systems that support information diversification require high-density memory with selector devices to reduce leakage current in cross-point architectures, which drives us to develop a functional switching layer that operates as three distinct devices, namely non-volatile memory, selector, and synaptic devices, using a GeTe-based single material system. In this study, amorphous Ag-GeTe switching layers are engineered by doping with Te species to achieve either resistive switching (RS) or threshold switching properties. The Ag/Ag-GeTe/Ag memory device exhibits multilevel characteris-tics via a tunable compliance current approach. By comparison, Ag/Ag-GeTex/Ag selector device provides excellent selectivity (>10(6)) with a very low OFF-current (similar to 10(-11) A). The RS mechanism for memory and selector devices is interrogated by using conductive atomic force microscopy. Moreover, the Ag/Ag-GeTe/Ag RS device mimics a cohort of basic and complex synaptic plasticity properties, including potentiation-depression and four-spike time-dependent plasticity rules that include asymmetric Hebbian, asymmetric anti-Hebbian, symmetric Hebbian, and symmetric anti-Hebbian learning rules. The capability of the synaptic devices to detect image edges is demonstrated by using a convolution neural network. The present work showcases the multi-functionality of Ag-GeTe materials, which will likely emerge as a prominent candidate for high-density cross-point architecture-based neuromorphic computing systems. (C) 2021 The Author(s). Published by Elsevier B.V.
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