期刊
RESULTS IN PHYSICS
卷 29, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.rinp.2021.104744
关键词
Graphene/silicon Schottky diode; Temperature dependence; Silicon dangling bond; P-b0 centers
资金
- City University of Hong Kong, Hong Kong SAR, China [9231249]
- [2018YFA0701400]
This study examined the adverse characteristics observed in the graphene/silicon Schottky junction and identified the important role of silicon surface defects, particularly P-b0 centers, in causing these characteristics. Additionally, it was found that graphene-covered silicon surfaces preserve a higher amount of P-b0 centers compared to other Si junctions or interfaces, contributing to the reported adverse current-voltage characteristics.
Distinct characteristics and yet adverse in some cases have been widely reported in the graphene/silicon Schottky junction under DC biasing, for biological and chemical sensing, or as a photodetector. The explanations to these observations are often attributed to the nature of the graphene layer but are still far from satisfactorily for many cases. In this work, we conducted a detailed analysis on both the forward and reverse current-voltage characteristics under different temperatures and we proposed that the silicon surface defects, which had been wellknown as P-b0 centers or equivalent to Si, should play an important role in the adverse characteristics observed in the Gr/ Si junction. Compared with the metal/Si and oxide/Si interface, the graphene-isolated P-b0 centers at the Gr/Si interface are chemically inactive but are still electrically active and that modify the carrier transportation over the junction barrier. Without efficient chemical passivation, the graphene-covered Si surface should maintain the most native Si surface such that it preserves a much higher amount of P-b0 centers as compared with other Si junctions or interfaces. This should be the main origin for the reported adverse current-voltage characteristics.
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