High-performance photodetector based on few-layered 2D MnPSe3

Recently, van der Waals layered metal phosphochalcogenides with a common formula MPX3 (e.g. M = Fe, Co, Ni, Mn; X = S, Se) have attracted intensive research interest as promising candidates in optoelectronic applications because of their strong light absorption and tunable bandgap. In this paper, we report the synthesis of high-quality MnPSe3 crystals and investigate the performance of photodetector based on two-dimensional (2D) MnPSe3. The fabricated device exhibits a low dark current (0.15 pA) and a high photo-responsivity without gate bias, together with excellent photoswitching stability toward short-wavelength light. Moreover, the photo-response properties of few-layered MnPSe3 are found to be dependent on the layer thickness, which is mainly attributed to the Schottky barrier. Our work promotes the further development of 2D MPX3 as promising photodetectors with low-power consumption.

Automated summary

This paper reports the synthesis of high-quality MnPSe3 crystals and investigates the performance of a photodetector based on two-dimensional MnPSe3. The device shows low dark current, high photo-responsivity, and excellent photoswitching stability toward short-wavelength light. The photo-response properties of few-layered MnPSe3 are found to be dependent on the layer thickness, mainly attributed to the Schottky barrier.