Ultra-thin plasmonic detectors

Plasmonic materials, and their ability to enable strong concentration of optical fields, have offered a tantalizing foundation for the demonstration of sub-diffraction-limit photonic devices. However, practical and scalable plasmonic optoelectronics for real world applications remain elusive. In this work, we present an infrared photodetector leveraging a device architecture consisting of a designer epitaxial plasmonic metal integrated with a quantum-engineered detector structure, all in a mature III-V semiconductor material system. Incident light is coupled into surface plasmon-polariton modes at the detector/designer metal interface, and the strong confinement of these modes allows for a sub-diffractive (similar to lambda(0)/33) detector absorber layer thickness, effectively decoupling the detector's absorption efficiency and dark current. We demonstrate high-performance detectors operating at non-cryogenic temperatures (T = 195 K), without sacrificing external quantum efficiency, and superior to well-established and commercially available detectors. This work provides a practical and scalable plasmonic optoelectronic device architecture with real world mid-infrared applications. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

This work presents an infrared photodetector with a device architecture leveraging quantum-engineered detector structure integrated with a designer epitaxial plasmonic metal in a mature III-V semiconductor material system. The strong confinement of incident light into surface plasmon-polariton modes allows for a sub-diffractive detector absorber layer thickness, achieving high-performance detectors at non-cryogenic temperatures.