Enabling VCSEL-on-silicon nitride photonic integrated circuits with micro-transfer-printing

New wavelength domains have become accessible for photonic integrated circuits (PICs) with the development of silicon nitride PICs. In particular, the visible and near-infrared wavelength range is of interest for a range of sensing and communication applications. The integration of energy-efficient III-V lasers, such as vertical-cavity surface-emitting lasers (VCSELs), is important for expanding the application portfolio of such PICs. However, most of the demonstrated integration approaches are not easily scalable towards low-cost and large-volume production. In this work, we demonstrate the micro-transfer-printing of bottom-emitting VCSELs on silicon nitride PICs as a path to achieve this. The demonstrated 850 nm lasers show waveguide-coupled powers exceeding 100 mu W, with sub-mA lasing thresholds and mW-level power consumption. A single-mode laser with a side-mode suppression ratio over 45 dB and a tuning range of 5 nm is demonstrated. Combining micro-transfer-printing integration with the extended-cavity VCSEL design developed in this work provides the silicon nitride PIC industry with a great tool to integrate energy-efficient VCSELs onto silicon nitride PICs. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.

Automated summary

This research demonstrates the integration of bottom-emitting VCSELs onto silicon nitride PICs through micro-transfer printing method, aiming to achieve low-cost and large-scale production. The 850 nm lasers exhibit high power, low threshold, and low power consumption. Important features such as single-mode laser and tuning range are also demonstrated in this study.