Semipolar {202 over bar 1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202 over bar 1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) handmade facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm(-2) and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.

Automated summary

Research showed that edge-emitting laser diodes fabricated on a reduced dislocation density epitaxial lateral overgrown wing can achieve laser action. Two types of facet feasibility studies were conducted, with results showing that facet LDs formed on wafers through reactive ion etching demonstrated laser action.