期刊
CRYSTALS
卷 11, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/cryst11121588
关键词
CsPbBr3 all-inorganic perovskite; interfacial traps; surface passivation; device stability
Recent research has shown that using all-inorganic perovskites as the photoactive layer in optoelectronic applications can improve stability and efficiency of photovoltaic devices, particularly when a surface treatment method is employed.
All-inorganic perovskites consisting of only inorganic elements have been recently considered as highly stable semiconductors for photoactive layer of optoelectronics applications. However, the formation of high-quality thin film and trap-reduced interface has still remains an important task, which should be solved for improving the performances of all-inorganic perovskite-based photovoltaics. Here, we adopted facile method that could reduce charge-carrier recombination by depositing a passivation agent on the top surface of the CsPbBr3 all-inorganic perovskite layer. We also found that the CsPbBr3 perovskite photovoltaic prepared from surface treatment method using n-octylammonium bromide provides an improved stability in ambient environment and 1-sun illuminating condition. Therefore, the perovskite photovoltaics fabricated from our approach offered an improved power conversion efficiency of 5.44% over that of the control device without surface treatment (4.12%).
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