期刊
APPLIED SCIENCES-BASEL
卷 12, 期 2, 页码 -出版社
MDPI
DOI: 10.3390/app12020820
关键词
solar cell; flexible photovoltaics; wafer bonding; epitaxial lift-off; heteroepitaxial growth
类别
资金
- National Research Foundation of Korea [NRF-2017M1A2A2048904, NRF-2021M3H4A1A02051240]
- KIST institutional project [2E31011]
- National Research Foundation of Korea [2021M3H4A1A02051240] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate the feasibility of growing GaAs thin film solar cells epitaxially on a Si substrate using a metal wafer bonding and epitaxial lift-off process. The use of a virtual substrate and optimization of materials and processes on the GaAs/Si virtual substrate enables the realization of high-efficiency solar cells.
We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 mu m GaAs buffer layer was first grown on Si as a virtual substrate, and a threading dislocation density of 1.8 x 10(7) cm(-2) was achieved via two In0.1Ga0.9As strained insertion layers and 6x thermal cycle annealing. An inverted p-on-n GaAs solar cell structure grown on the GaAs/Si virtual substrate showed homogenous photoluminescence peak intensities throughout the 2 '' wafer. We show a 10.6% efficient GaAs thin film solar cell without anti-reflection coatings and compare it to nominally identical upright structure solar cells grown on GaAs and Si. This work paves the way for large-scale and low-cost wafer-bonded III-V multi-junction solar cells.
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