4.6 Article

In Situ X-ray Measurements to Follow the Crystallization of BaTiO3 Thin Films during RF-Magnetron Sputter Deposition

期刊

APPLIED SCIENCES-BASEL
卷 11, 期 19, 页码 -

出版社

MDPI
DOI: 10.3390/app11198970

关键词

GISAXS; GIXRPD; XRR; in situ; synchrotron radiation; oxid thin films; crystallization; sputter deposition; BaTiO3

资金

  1. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-76SF00515]
  2. Volkswagen Foundation within a Peter Paul Ewald-Fellowship

向作者/读者索取更多资源

This article presents an advanced sputtering technique for studying thin film growth with a focus on crystallization. It demonstrates the different stages of crystallization during the film growth process and how it can be used to optimize thin film quality, efficiency, and performance.
Here, we report on adding an important dimension to the fundamental understanding of the evolution of the thin film micro structure evolution. Thin films have gained broad attention in their applications for electro-optical devices, solar-cell technology, as well storage devices. Deep insights into fundamental functionalities can be realized via studying crystallization microstructure and formation processes of polycrystalline or epitaxial thin films. Besides the fundamental aspects, it is industrially important to minimize cost which intrinsically requires lower energy consumption at increasing performance which requires new approaches to thin film growth in general. Here, we present a state of the art sputtering technique that allows for time-resolved in situ studies of such thin film growth with a special focus on the crystallization via small angle scattering and X-ray diffraction. Focusing on the crystallization of the example material of BaTiO3, we demonstrate how a prototypical thin film forms and how detailed all phases of the structural evolution can be identified. The technique is shaped to enable a versatile approach for understanding and ultimately controlling a broad variety of growth processes, and more over it demonstrate how to in situ investigate the influence of single high temperature sputtering parameters on the film quality. It is shown that the whole evolution from nucleation, diffusion adsorption and grain growth to the crystallization can be observed during all stages of thin film growth as well as quantitatively as qualitatively. This can be used to optimize thin-film quality, efficiency and performance.

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