期刊
ADVANCED SCIENCE
卷 9, 期 9, 页码 -出版社
WILEY
DOI: 10.1002/advs.202105268
关键词
antimony triselenide; carrier lifetime; deep-level defect; DLTS; SRH recombination
资金
- National Key Research and Development Program of China [2019YFA0405600]
- National Natural Science Foundation of China [U19A2092, GG2060140111]
- Institute of Energy, Hefei Comprehensive National Science Center [21KZS212]
- Collaborative Innovation Program of Hefei Science Center, CAS
This study demonstrates the sensitivity of deep-level defects in antimony triselenide to stoichiometry. Amphoteric Sb-Se defects play a critical role in charge recombination and device performance.
Characterizing defect levels and identifying the compositional elements in semiconducting materials are important research subject for understanding the mechanism of photogenerated carrier recombination and reducing energy loss during solar energy conversion. Here it shows that deep-level defect in antimony triselenide (Sb2Se3) is sensitively dependent on the stoichiometry. For the first time it experimentally observes the formation of amphoteric Sb-Se defect in Sb-rich Sb2Se3. This amphoteric defect possesses equivalent capability of trapping electron and hole, which plays critical role in charge recombination and device performance. In comparative investigation, it also uncovers the reason why Se-rich Sb2Se3 is able to deliver high device performance from the defect formation perspective. This study demonstrates the crucial defect types in Sb2Se3 and provides a guidance toward the fabrication of efficient Sb2Se3 photovoltaic device and relevant optoelectronic devices.
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