Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide (InSe), a 2D metal monochalcogenide, is investigated to demonstrate a nonvolatile switching device. Detailed microscopic characterization supported with density functional theory calculations reveals cationic filamentary-based nonvolatile switching mechanism of gamma-InSe in a crossplanar architecture. This is electrically driven by diffusion of Ag ions through the layered InSe stack. The InSe-based memory cells exhibit a switching ratio of approximate to 10(3) and a memory retention of >10(5) s. This work opens new opportunities to enhance resistive switching performances of 2D materials for next-generation information storage and brain inspired computation using active metal diffusion.

Automated summary

This study investigates the interplay between silver cations and indium selenide, demonstrating a nonvolatile switching device with a filamentary-based mechanism. The research opens new opportunities for enhancing resistive switching performances of 2D materials for next-generation information storage and brain-inspired computation using active metal diffusion.