Homogeneous Palladium Diselenide pn-Junction Diodes for Reconfigurable Circuit Applications

Layered 2D materials, owing to their unique physical and electrical properties, have significant potential for use in future nanomaterial-based electronic devices. Among these, palladium diselenide (PdSe2) has recently emerged as a distinct 2D material with air stability and strong ambipolar property. In this study, the versatility of a PdSe2-based split-gate field-effect transistor (SG-FET) using its stable ambipolar nature is demonstrated. By applying sequentially polarized SG biases, the PdSe2 SG-FET could be operated as a homogeneous and reconfigurable pn-junction diode. The optimized h-BN/PdSe2/h-BN sandwich SG-FET exhibits almost symmetric behaviors in the n- and p-channel regions, enabling a reconfigurable single-inversion AND (SAND) logic gate function, which can be used as a phase difference-detection circuit composed only of a single component. It is believed that this approach to the reconfigurable diode and its circuit application paves the way for future 2D material-based electronics.

Automated summary

This study demonstrates the design of a reconfigurable diode and logic gate function using a split-gate field-effect transistor (SG-FET) based on palladium diselenide (PdSe2) with stable ambipolar properties. This approach opens up new possibilities for future 2D material-based electronics.