期刊
ADVANCED ELECTRONIC MATERIALS
卷 8, 期 3, 页码 -出版社
WILEY
DOI: 10.1002/aelm.202100907
关键词
organic electrochemical transistors; organic mixed ion-electron conductors; screen-printing; voltage amplifiers
资金
- Knut and Alice Wallenberg foundation
- Swedish Research Council [2016-03979, 2020-03243]
- Swedish Foundation for Strategic Research [SE13-0045]
- AForsk [18-313, 19-310]
- Olle Engkvists Stiftelse [204-0256]
- VINNOVA [2020-05223]
- European Commission through the FET-OPEN project MITICS [GA-964677]
- Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]
- Swedish Research Council [2020-03243] Funding Source: Swedish Research Council
The article discusses the development of low-power, high-gain flexible circuits based on printed complementary OECTs, which leverage the low threshold voltage of OECTs to detect voltage signals as low as 100 μV with high gain. These complementary voltage amplifiers demonstrate high performance in amplifying low-amplitude signals, setting a new standard in power-efficient platforms for sensing and amplifying voltage signals in emerging beyond-silicon applications.
The ability to accurately extract low-amplitude voltage signals is crucial in several fields, ranging from single-use diagnostics and medical technology to robotics and the Internet of Things (IoT). The organic electrochemical transistor (OECT), which features large transconductance values at low operating voltages, is ideal for monitoring small signals. Here, low-power and high-gain flexible circuits based on printed complementary OECTs are reported. This work leverages the low threshold voltage of both p-type and n-type enhancement-mode OECTs to develop complementary voltage amplifiers that can sense voltages as low as 100 mu V, with gains of 30.4 dB and at a power consumption of 0.1-2.7 mu W (single-stage amplifier). At the optimal operating conditions, the voltage gain normalized to power consumption reaches 169 dB mu W-1, which is >50 times larger than state-of-the-art OECT-based amplifiers. In a monolithically integrated two-stage configuration, these complementary voltage amplifiers reach voltage gains of 193 V/V, which are among the highest for emerging complementary metal-oxide-semiconductor-like technologies operating at supply voltages below 1 V. These flexible complementary circuits based on printed OECTs define a new power-efficient platform for sensing and amplifying low-amplitude voltage signals in several emerging beyond-silicon applications.
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