Modulation of optical and electrical properties in hexagonal boron nitride by defects induced via oxygen plasma treatment

Defects in hexagonal boron nitride (hBN) have attracted much attention since they are effectively used for nanoelectronics, such as single-photon emitters or memristors. The method for generating and controlling hBN defects is important because the defects are critical factors determining the optical and electrical properties of hBN. Here, we demonstrate the modulation of optical and electrical properties of hBN by defects generated via mild oxygen plasma treatment. The photoluminescence peaks related to defects were observed at a broad range (similar to 3.8 eV), and the current of plasma-treated hBN flow at the lower threshold voltage compared to the as-exfoliated hBN due to the formation of defect paths inside the hBN structure. We also demonstrate that the bandgap structure of hBN can be tuned by the oxygen plasma treatment. Our findings are useful for the stable and reliable fabrication of two-dimensional electronic devices using hBN in the future.

Automated summary

Defects in hexagonal boron nitride (hBN) have been studied for their potential applications in nanoelectronics, with researchers demonstrating the modulation of optical and electrical properties through mild oxygen plasma treatment-induced defects. The presence of defects was found to impact the photoluminescence peaks and current flow characteristics of hBN. Additionally, the bandgap structure of hBN was shown to be tunable via oxygen plasma treatment, offering insights for future fabrication of two-dimensional electronic devices using hBN.