期刊
2D MATERIALS
卷 9, 期 1, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2053-1583/ac3c9b
关键词
graphene; spin-to-charge conversion; proximity effect; spin-orbit coupling; spin Hall effect; Rashba-Edelstein effect
资金
- Spanish MICINN [RTI2018-094861-B-100, MDM-2016-0618, BES-2017-07963]
- European Union [7949822-DSTOP, 0766025-QuESTech]
- 'Valleytronics' Intel Science Technology Center
- 'Juan de la Cierva-Formacion' program by the Spanish MICINN [FJC2018-038580-I, FJC2018-038688-I]
Understanding spin physics in graphene is crucial for developing future spintronic devices. Recent studies have shown efficient spin-to-charge conversions in graphene through proximity with other materials. However, these conversions may be affected by other factors, which need to be taken into consideration.
Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions (SCCs) via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect (IREE) can be achieved in graphene by proximity with an adjacent spin-orbit coupling (SOC) material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the IREE can be measured in pristine graphene possessing negligible SOC, confirming that these signals are unrelated to SCC. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of SCC measurement schemes in graphene, which should be taken into account when designing future experiments.
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