Surface and dynamical properties of GeI2

GeI2 is an interesting two-dimensional wide-band gap semiconductor because of diminished edge scattering due to an absence of dangling bonds. Angle-resolved x-ray photoemission spectroscopy indicates a germanium rich surface, and a surface to bulk core-level shift of 1.8 eV in binding energy, between the surface and bulk components of the Ge 2p(3/2) core-level, making clear that the surface is different from the bulk. Temperature dependent studies indicate an effective Debye temperature (theta(D)) of 186 +/- 18 K for the germanium x-ray photoemission spectroscopy feature associated with the surface. These measurements also suggest an unusually high effective Debye temperature for iodine (587 +/- 31 K), implying that iodine is present in the bulk of the material, and not the surface. From optical absorbance, GeI2 is seen to have an indirect (direct) optical band gap of 2.60 (2.8) +/- 0.02 (0.1) eV, consistent with the expectations. Temperature dependent magnetometry indicates that GeI2 is moment paramagnetic at low temperatures (close to 4 K) and shows a diminishing saturation moment at high temperatures (close to 300 K and above).

Automated summary

GeI2 is an interesting two-dimensional wide-band gap semiconductor with unique surface and bulk properties. Studies suggest the presence of iodine in the bulk of GeI2, and the optical band gap of GeI2 is consistent with expectations. GeI2 exhibits paramagnetic behavior at low temperatures and a diminishing saturation moment at high temperatures.