期刊
PHYSICAL REVIEW APPLIED
卷 16, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.16.044049
关键词
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资金
- National Natural Science Foundation of China [91833303, 61974043, 62074058, 62090013, 61674057]
- National Key Research and Development Program of China [2019YFB2203400]
- Projects of Science and Technology Commission of Shanghai Municipality [21JC1402100, 18JC1412400, 18YF1407200, 18YF1407000, 19511120100]
- Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, Shanghai Pujiang Program [20PJ1403600]
- Fundamental Research Funds for the Central Universities
High-performance artificial synaptic devices based on 2D HfS2/h-BN/FG-graphene heterostructures have been designed, showing competitive performances with high on:off ratio, large memory window, excellent charge retention ability, and robust durability. Artificial optoelectronic synapses built on these devices demonstrate impressive large conductance margin, good linearity, low energy consumption, and high recognition accuracy, paving the way for efficient optogenetics-inspired neuromorphic computing.
High-performance artificial synaptic devices are key building blocks for developing efficient neuromorphic computing systems. However, the nonlinear and asymmetric weight update of existing devices has restricted their practical applications. Herein, floating gate nonvolatile memory (FG NVM) devices based on two-dimensional (2D) HfS2/h-BN/FG-graphene heterostructures have been designed and investigated as multifunctional NVM and artificial optoelectronic synapses. Benefiting from the FG architecture, the HfS2-based NVM device exhibits competitive performances, such as a high on:off ratio (> 10(5)), large memory window (approximately 100 V), excellent charge retention ability (> 10(4)s), and robust durability (> 10(3)cycles). Notably, the artificial optoelectronic synapses based on HfS2 FG NVM show an impressive large conductance margin and good linearity, owing to the ultrahigh photoresponsivity and photogain of HfS2. The energy consumption of per spike in our artificial synapse is as low as 0.2 pJ. Therefore, a high recognition accuracy up to 91.5% of the artificial neural network on the basis of our HfS2-based optoelectronic synapse at the system level has been achieved, which is superior to other reported 2D artificial optoelectronic synapses. This work paves the way forward for all 2D material-based memory for developing efficient optogenetics-inspired neuromorphic computing in brain-inspired intelligent systems.
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