期刊
NANOMATERIALS
卷 11, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/nano11123377
关键词
H2S gas sensing; ZnO nanostructure; MEMS device; AZO; gas selectivity
类别
资金
- Ministry of Science and Technology of Taiwan [MOST 109- 2622-E-492-013]
The study investigated the properties of H2S gas sensing using a ZnO nanostructure developed on a MEMS device with AZO and Al surfaces. Hydrothermal synthesis was used for ZnO deposition and optimal conditions for H2S gas sensing were identified with 250 degrees C temperature and 90 min growth time. The ZnO sensor showed high selectivity towards H2S gas and provided optimal sensing responses at specific temperature and growth time.
The properties of H2S gas sensing were investigated using a ZnO nanostructure prepared with AZO (zinc oxide with aluminium) and Al surfaces which were developed on a MEMS (Micro Electromechanical System) device. Hydrothermal synthesis was implemented for the deposition of the ZnO nanostructure. To find the optimal conditions for H2S gas sensing, different ZnO growth times and different temperatures were considered and tested, and the results were analysed. At 250 degrees C and 90 min growth time, a ZnO sensor prepared with AZO and 40 nm Al recorded an 8.5% H2S gas-sensing response at a 200 ppb gas concentration and a 14% sensing response at a gas concentration of 1000 ppb. The dominant sensing response provided the optimal conditions for the ZnO sensor, which were 250 degrees C temperature and 90 min growth time. Gas sensor selectivity was tested with five different gases (CO, SO2, NO2, NH3 and H2S) and the sensor showed great selectivity towards H2S gas.
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