期刊
NANOMATERIALS
卷 11, 期 10, 页码 -出版社
MDPI
DOI: 10.3390/nano11102556
关键词
GeSn; CVD; lasers; detectors; transistors
类别
资金
- construction of a high-level innovation research institute from the Guangdong Greater Bay Area Institute of Integrated Circuit and System [2019B090909006]
- construction of new research and development institutions [2019B090904015]
- National Key Research and Development Program of China [2016YFA0301701]
- Youth Innovation Promotion Association of CAS [Y2020037]
- National Natural Science Foundation of China [92064002]
GeSn alloys have attracted extensive attention for their excellent properties and wide-ranging applications, with CVD being the dominant growth method in the industry. This review focuses on recent advancements in GeSn CVD growth, detectors, lasers, and transistors, which will contribute to the development of high-performance electronic and optoelectronic devices.
GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据