A Selective Etching Route for Large-Scale Fabrication of β-Ga2O3 Micro-/Nanotube Arrays

In this paper, based on the different etching characteristics between GaN and Ga2O3, large-scale and vertically aligned beta-Ga2O3 nanotube (NT) and microtube (MT) arrays were fabricated on the GaN template by a facile and feasible selective etching method. GaN micro-/nanowire arrays were prepared first by inductively coupled plasma (ICP) etching using self-organized or patterning nickel masks as the etching masks, and then the Ga2O3 shell layer converted from GaN was formed by thermal oxidation, resulting in GaN@Ga2O3 micro-/nanowire arrays. After the GaN core of GaN@Ga2O3 micro-/nanowire arrays was removed by ICP etching, hollow Ga2O3 tubes were obtained successfully. The micro-/nanotubes have uniform morphology and controllable size, and the wall thickness can also be controlled with the thermal oxidation conditions. These vertical beta-Ga2O3 micro-/nanotube arrays could be used as new materials for novel optoelectronic devices.

Automated summary

In this study, large-scale and vertically aligned beta-Ga2O3 nanotube and microtube arrays were fabricated on a GaN template using a selective etching method based on different etching characteristics between GaN and Ga2O3. These micro/nanotubes have uniform morphology, controllable size, and adjustable wall thickness, demonstrating potential for novel optoelectronic devices.