Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe2N4 van der Waals Heterostructures

van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te-4-MoSTe/MoGe2N4 vdWH is a semimetal, while S-4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.

Automated summary

This study investigated the electronic and optical properties of MoSTe/MoGe2N4 vdWH under different configurations and found that it exhibits both semimetal and direct band gap semiconductor behaviors. The absorption coefficient of MoSTe/MoGe2N4 vdWH significantly increases compared to the two monolayers, and its electronic structure and absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. MoSTe/MoGe2N4 vdWH is considered as an excellent candidate for high-performance optoelectronic devices.