A New Approach to the Formation of Nanosized Gold and Beryllium Films by Ion-Beam Sputtering Deposition

Thin films of beryllium and gold that are several tens of nanometers thick were obtained, for the first time, on silicon and quartz substrates by the ion-beam method with tenfold alternation of deposition and partial sputtering of the nanosized metal layer. Scanning electron and atomic force microscopy indicate the predominant lateral growth of nanosized metal layers along the substrate surface. Optical spectra indicate the suppression of the localized plasmon resonance. The growth of the film occurs under the influence of the high-energy component of the sputtered metal atoms' flux. The main role in the formation of the nanosized metal film is played by the processes of the elastic collision of incident metal atoms with the atoms of a substrate and a growing metal film. Metal films that are obtained by the tenfold application of the deposition-sputtering of a nanoscale metal layer are characterized by stronger adhesion to the substrate and have better morphological, electrical, and optical characteristics than those that are obtained by means of direct single deposition.

Automated summary

Thin films of beryllium and gold with nanoscale thickness were successfully obtained on silicon and quartz substrates using the ion-beam method. These films exhibit better morphological, electrical, and optical characteristics compared to those obtained by direct deposition.