4.7 Article

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

期刊

NANOMATERIALS
卷 12, 期 3, 页码 -

出版社

MDPI
DOI: 10.3390/nano12030346

关键词

quasi-free-standing epitaxial graphene; H-2 intercalation; evolution process

资金

  1. National Natural Science Foundation of China [62004118]
  2. Shandong Provincial Natural Science Foundation [ZR2019BEM030]
  3. Basic Research Operation Funds of Shandong University [2020GN080]

向作者/读者索取更多资源

In this study, quasi-free-standing bilayer epitaxial graphene (QFSBEG) on SiC was fabricated by H-2 intercalation under different time periods. The temperature-dependent Raman spectra were recorded to evaluate the intrinsic structural difference generated by H-2 time duration. The study found that H-2 intercalation significantly weakened the pinning effect in epitaxial graphene, and observed a disparity of pinning effects between QFSBEG samples. Additionally, the anharmonic phonon effect was investigated from the Raman lineshift of peaks.
Epitaxial graphene on SiC without substrate interaction is viewed as one of the most promising two-dimensional (2D) materials in the microelectronics field. In this study, quasi-free-standing bilayer epitaxial graphene (QFSBEG) on SiC was fabricated by H-2 intercalation under different time periods, and the temperature-dependent Raman spectra were recorded to evaluate the intrinsic structural difference generated by H-2 time duration. The G peak thermal lineshift rates d omega/dT showed that the H-2 intercalation significantly weakened the pinning effect in epitaxial graphene. Furthermore, the G peak d omega/dT value showed a perspicuous pinning effect disparity of QFSBEG samples. Additionally, the anharmonic phonon effect was investigated from the Raman lineshift of peaks. The physical mechanism responsible for dominating the G-mode temperature-dependent behavior among samples with different substrate coupling effects was elucidated. The phonon decay process of different samples was compared as the temperature increased. The evolution from in situ grown graphene to QFSBEG was determined. This study will expand the understanding of QFSBEG and pave a new way for its fabrication.

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