Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications

Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 10(9) photons per second under electrical excitation. However, the spectral emission properties of color centers in SiC at room temperature are far from ideal. The spectral properties could be significantly improved by decreasing the operating temperature. However, the densities of free charge carriers in SiC rapidly decrease as temperature decreases, which reduces the efficiency of electrical excitation of color centers by many orders of magnitude. Here, we study for the first time the temperature characteristics of SPEDs based on color centers in 4H-SiC. Using a rigorous numerical approach, we demonstrate that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 10(7) photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes. This gives the possibility to achieve high brightness and good spectral properties at the same time, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide.

Automated summary

Color centers in silicon carbide are promising emitters for single-photon emitting diodes (SPEDs), but their spectral emission properties at room temperature are not ideal. By decreasing the operating temperature, spectral properties can be improved, although the efficiency of electrical excitation decreases due to a reduction in free charge carrier densities. This research explores the temperature characteristics of SPEDs based on color centers in 4H-SiC, demonstrating the potential for high brightness and improved spectral properties at lower temperatures through hole superinjection in homojunction p-i-n diodes.