4.7 Article

Thin-Film Solar Cells Based on Selenized CuSbS2 Absorber

期刊

NANOMATERIALS
卷 11, 期 11, 页码 -

出版社

MDPI
DOI: 10.3390/nano11113005

关键词

thin film solar cells; CuSbS2; CuSbS2(Se); spray pyrolysis deposition; selenylation

资金

  1. National Key Research and Development Project of China [2018YFB0407102]
  2. Sichuan Province Key Laboratory of Display Science and Technology [ZYGX2022K018]
  3. Program of Chongqing Science & Technology Commission [cstc2018jscxmsybX0099, cstc2019jcyj-msxmX0877]
  4. Financial Projects of Sichuan Science and Technology Department [2018ZYZF0062]
  5. Scientific and Technological Research Program of Chongqing Municipal Education Commission [KJZD-K201901302, KJQN201901348, KJCX2020048]
  6. Public Service Platform for The Industrialization of Technological Innovation Achievements in the Field of Robot and Intelligent Manufacturing in Chongqing [2019-00900-1-1]

向作者/读者索取更多资源

Selenylation significantly improved the efficiency of CuSbS2 solar cells by effectively doping Se into the lattice and reducing carrier recombination centers. The substitution rate of Se was very high (>39%), and the selenized device showed a much higher efficiency of 0.90% compared to the simply annealed device (0.46%), demonstrating the promising potential of this technique.
Copper antimony sulfide (CuSbS2) has attracted significant interest as an earth-abundant photovoltaic absorber. However, the efficiency of the current CuSbS2 photovoltaic device is too low to meet the requirement of a large-scale application. In this study, selenylation was introduced to optimize the band structure and improve the device performance. Selenized CuSbS2 [CuSbS2(Se)] films were realized using porous CuSbS2 films prepared by spray deposition with a post-treatment in Se vapor. The as-prepared CuSbS2(Se) films exhibited a compact structure. X-ray diffraction and elemental analysis confirmed the effective doping of Se into the lattice by substituting a part of S in CuSbS2. Elemental analysis revealed a gradient distribution for Se from the top surface to the deeper regions, and the substitution rate was very high (> 39%). Dark J-V characteristics and AC impedance spectroscopy analysis showed that selenylation significantly reduced the carrier recombination center. As a result, the selenized CuSbS2 device exhibited a significant efficiency improvement from 0.12% to 0.90%, which is much higher than that of the simply annealed device (0.46%), indicating this technique is a promising approach to improve the performance of CuSbS2 solar cells.

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